J201 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: J201
- Download J201 datasheet from Fairchild Semiconductor: pdf 616 kb: N-Channel silicon junction field-effect transistor Others with the same file for datasheet: SMPJ201, SMPJ202: Download J201 datasheet from InterFET Corporation: pdf 97 kb: Low Noise, Single, N-Channel JFET Amplifier: Download J201 datasheet from Linear Systems: pdf 123 kb: Low.
- J201 ON Semiconductor / Fairchild JFET N-Channel Transistor General Purpose datasheet, inventory, & pricing.
Unfortunately, Tillman's amplifier requires a J201 FET. The J201 is a very special device and an excellent choice. Yet it's uncommon to hobbyists. But my site solves the mystery. I've designed a similar preamplifier with an everyday JFET. ABOUT MPF102 SUBSTITUTES. JFET J201 N-Channel Transistor. Used in MOD Kits.Note - this is a fragile component! Use caution not to overheat or break leads.
Тип транзистора: JFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 0.625 W
Предельно допустимое напряжение сток-исток |Uds|: 40 V
Предельно допустимое напряжение затвор-исток |Ugs|: 1.5 V
Максимально допустимый постоянный ток стока |Id|: 0.001 A
Максимальная температура канала (Tj): 150 °C
Тип корпуса: TO-92
J201 Datasheet (PDF)
0.1. 2sj201.pdf Size:268K _toshiba
2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High-Power Amplifier Application Unit: mm High breakdown voltage : VDSS = -200 V High forward transfer admittance : |Yfs| = 5.0 S (typ.) Complementary to 2SK1530 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source voltage VDSS -200 VJEDEC Gate-source voltag
0.2. j201.pdf Size:851K _fairchild_semi
J201 MMBFJ201J202 MMBFJ202GSTO-92GS SOT-23 NOTE: Source & DrainDD are interchangeableMark: 62P / 62QN-Channel General Purpose AmplifierThis device is designed primarily for low level audio and generalpurpose applications with high impedance signal sources. Sourcedfrom Process 52.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value Uni
0.3. j201 j202 mmbfj201 mmbfj202 mmbfj203.pdf Size:783K _fairchild_semi
January 2008J201 - J202 / MMBFJ201 - MMBFJ203N-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 52.TO-92 SOT-2332MarkingMarking J201MMBFJ201 : 62PJ202MMBFJ202 : 62Q1 11. Drain 2. Source 3. Gate 1. Drain 2. Source 3. GateAbsolute
0.4. j201 j202 j204c sst201 sst202 sst204c.pdf Size:78K _vishay
J/SST201 Series Vishay SiliconixN-Channel JFETsJ201 SST201J202 SST202J204 SST204PRODUCT SUMMARYPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)J/SST201 -0.3 to -1.5 -40 0.5 0.2J/SST202 -0.8 to -4 -40 1 0.9J/SST204 -0.3 to -2 -25 0.5 0.2FEATURES BENEFITS APPLICATIONSD Low Cutoff Voltage: J201
0.5. j201 j202 j203 j204 sst201 sst202 sst203 sst204.pdf Size:22K _calogic
N-Channel JFETGeneral Purpose AmplifierCORPORATIONJ201 J204 / SST201 SST204FEATURES ABSOLUTE MAXIMUM RATINGS(TA = 25oC unless otherwise specified) High Input Impedance Low IGSS Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -40VGate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mAStorage Temperature Range
0.6. cj201nl.pdf Size:151K _jiangsu
J201 Jfet Schematic
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors CJ201NL TRANSISTOR (NPN) SOT23 FEATURES High Collector Current Capability Low Collector-emitter Saturation Voltage High Efficiency Leading to Less Heat Generation 1. BASE Reduced PCB Requirements 2. EMITTER Alternatived Effectively to MOSFETS in Specific Applications
0.7. lj2015-52.pdf Size:105K _china
LJ2015-52FD75C NPN P T =25 75 WCM CI 10 ACMT 150 jmT -55~150 stgV I 2mA 50 V(BR)CBO CBV I 2mA 50 V(BR)CEO CEI V =20V 2 mACBO CBI V =20V 2 mACEO EBV 2.5 VBEsatI =5ACI =0.5AB
0.8. cs7456 lj2015-53.pdf Size:70K _china
LJ2015-53CS7456DP N P T =25 1.9 WD AI V =10V,T =25 5.7 AD GS AI 40 ADMV 20 VGST +150 jmT -55 +150 stgR 65thJA /WR 1.8thJCBV V =0V,I =0.25mA 100 VDSS GS DV =10V,I =9.3A 0.025
Другие MOSFET... JFTJ105, J174, J175, J176, J177, MMBFJ175, MMBFJ176, MMBFJ177, IRF740, J202, MMBFJ201, MMBFJ202, J210, MMBFJ210, MMBFJ211, MMBFJ212, J270.
Список транзисторов
Обновления
MOSFET: CEZ3R04 | CEZ3P08 | CES2322 | CEB93A3 | CEF9060N | CEB6086 | CEN2321A | CEN2307A | CEM9288 | CEM6056L | CEM4052 | CEM2192 | CEU25N02 | CED25N02 | CEU20N02 | CED20N02
The resistor from the gate to ground will be a very high value--typically 1 Meg or more. It allows the gate to 'see' ground, but no voltage is dropped across it because current doesn't flow into the gate. In the drain circuit, we know that current flows from drain to source. By putting a small resistor RS between the source and ground, the gate becomes effectively negative with respect to the source by the amount of the voltage drop (ID * RS) across the resistor.
Looking at the graph and the data in figure 11, I chose to set the bias at -.18 V, which puts ID at .14 ma. (.00014 amp). By Ohm's law, the required resistance is then: .18 / .00014 or 1285 Ohms.
J201 Jfet Equivalent
We could use a 1% resistor to get really close, but that is not necessary for most practical purposes. I set RS at 1.2K, the nearest standard value in 5% tolerance and added the 100 ohm resistor to be able to easily measure ID (Fig. 14). As you can see from the readings in Fig. 15 and Fig. 16, the bias is almost spot-on.
J201 Fet
The breadboard kit includes a range of 5% carbon film resistors from which to select a value that sets ID close to half of IDSS.