The UJ3N series are high-performance SiC normally-on JFET transistors, from 650V to 1700V, with ultra-low on resistance (RDS (on)) as low as 25mohm. Gate charge (QG) is also low, allowing for low conduction and reduced switching loss. They are also ideal for circuit protection. 1 000 000 SiC MOSFETs on the road. Tesla Model 3 manufacturing prediction from Bloomberg reach 38000 units as we speak (end of June 2018). 24 SiC MOSFET modules are used in each Model 3 inverter, this represents almost 1 Million ST Micro’s SiC MOSFETs on our roads.
Infineon's OptiMOS™ N-channel power MOSFETs were developed to increase efficiency, power density and cost-effectiveness. Designed for high-performance applications and optimized for high switching frequencies, OptiMOS™ products offer the industry's best figure of merit.
Now complemented by StrongIRFET™ and StrongIRFET™ 2 N-channel MOSFETs, this extended portfolio creates a truly compelling combination. StrongIRFET™ and StrongIRFET™ 2 MOSFETs add robust design and excellent price/performance to the best-in-class technology of OptiMOS™ MOSFETs. Both product families meet the highest quality and performance demands.
22-03-2021 | UnitedSiC | Test & Measurement
UnitedSiC launched the FET-Jet Calculator, a simple, registration-free online tool that helps selection and performance comparison in various power applications and topologies. This new tool enables engineers to make design decisions swiftly and with confidence.
Sic Fets
To identify the optimal device for their power design, users pick their application function and topology, insert their design parameter details, and the tool calculates switch current, efficiency, and losses automatically, categorised by conduction, turn-on, and turn-off contributions. Operating temperature and heatsink rating are incorporated as inputs to display expected operating junction temperatures.
Ixys Sic Fet
Users can examine the impact of changing conduction modes in the different topologies by modifying storage inductor and switching frequency values. Furthermore, single or paralleled devices can be picked to show the relative overall performance of devices with different current ratings.
Sic Mosfet Cree
The tool alerts the user if a selection is not suitable, such as when voltage rating is insufficient for the conditions and topology chosen, assisting the user to quickly arrive at a viable solution.
Six. Fet. You Love
Anup Bhalla, VP Engineering at UnitedSiC, comments: “Selecting the right device in the right power topology shouldn’t be a barrier to power designers considering the switch to SiC. This is why we built the FET-Jet Calculator. For engineers working with SiC for the first time, or those looking for the best SiC device to fit evolving designs, the calculator is a quick and easy way to evaluate UnitedSiC FETs in a variety of power topologies - speeding up R&D by avoiding any wasted time creating advanced simulations for inappropriate devices. Just a few clicks put you on the right heading to arrive at an optimum design.”